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Proceedings Paper

Influence of charge trapping in gallium arsenide radiation detectors
Author(s): Giuseppe Bertuccio; Claudio Canali; Filipo Nava
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Paper Abstract

In this paper, the effects of the trapping of electrons and holes on the performance of gallium arsenide x-(gamma) ray detectors are analyzed. Starting from the experimental spectra acquired with state of the art GaAs detectors, it is shown how much the existing modeling of the charge trapping can explain the data and predict the observed excess noise due to the trapping. An analysis made with Monte-Carlo simulations has been carried out and compared with the experiments. The relationship between the fraction of the trapped charge and the energy resolution of the detector has been determined and analyzed.

Paper Details

Date Published: 1 July 1998
PDF: 7 pages
Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); doi: 10.1117/12.312888
Show Author Affiliations
Giuseppe Bertuccio, Politecnico di Milano (Italy)
Claudio Canali, Univ. degli Studi di Modena (Italy)
Filipo Nava, Univ. degli Studi di Modena (Italy)


Published in SPIE Proceedings Vol. 3446:
Hard X-Ray and Gamma-Ray Detector Physics and Applications
F. Patrick Doty; Richard B. Hoover, Editor(s)

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