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Proceedings Paper

Growth and properties of semi-insulating CdZnTe for radiation detector applications
Author(s): Csaba Szeles; Michael C. Driver
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Paper Abstract

The growth and properties of semi-insulating CdZnTe for nuclear radiation detector applications are reviewed. The current state of the high-pressure Bridgman growth and the potentials of the conventional vertical and horizontal Bridgman techniques to grow radiation detector material are discussed. The characteristic macroscopic and microscopic defects of high-pressure Bridgman grown CdZnTe ingots, such as cracks, pipes, inclusions, precipitates, grain boundaries and their effect on the electrical and charge trapping properties of the material are reviewed.

Paper Details

Date Published: 1 July 1998
PDF: 8 pages
Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); doi: 10.1117/12.312878
Show Author Affiliations
Csaba Szeles, eV Products, a division of II-VI, Inc. (United States)
Michael C. Driver, eV Products, a division of II-VI, Inc. (United States)


Published in SPIE Proceedings Vol. 3446:
Hard X-Ray and Gamma-Ray Detector Physics and Applications
F. Patrick Doty; Richard B. Hoover, Editor(s)

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