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Proceedings Paper

Photoluminescence decay in porous silicon films
Author(s): I. Baltog; M. L. Ciurea; Gabriela Pavelescu; L. Mihut; M. Baibarac
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Paper Abstract

The photoluminescence (PL) decay measurements were performed on porous silicon films. It was observed that the two components of PL, one of them fast (ns) and the other slow (microsecond(s) or ms sometimes) have different contributions to PL signal, depending on the wavelength of the excitation light. The slow component of PL was in details investigated. Time decay cures for different excitation (337.1 nm, 470 nm, and 550 nm) and emission (550, 650, 700, 800 and 860 nm) wavelengths and also for different excitation intensities were taken. All decay curves were fitted with a stretched exponential. The slow component of PL was proposed to be attributed to the radiative recombination on surfaces.

Paper Details

Date Published: 2 July 1998
PDF: 4 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312818
Show Author Affiliations
I. Baltog, National Institute for Materials Physics (Romania)
M. L. Ciurea, National Institute for Materials Physics (Romania)
Gabriela Pavelescu, National Institute for Materials Physics (Romania)
L. Mihut, National Institute for Materials Physics (Romania)
M. Baibarac, National Institute for Materials Physics (Romania)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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