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Proceedings Paper

Excited xenon(1s4) atom detection by modulation laser absorption spectroscopy
Author(s): Yosuke Sakai; M. A. Bratescu; Geavid Musa; Kenji Miyamoto; M. Miclea
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Paper Abstract

A study on the space distribution of the excited xenon atoms on level 1s4 in a d.c. discharge in neon-xenon mixture is presented in this paper. The relative density of the excited xenon atoms was measured using diode laser absorption at 828.239 nm, corresponding to the xenon transition between 1s4 and 2p5 levels. A comparative analysis of the laser absorption signal and corresponding optogalvanic signal, permitted us to define a new parameter, namely optogalvanic effect efficiency, EffOG, as the size of the optogalvanic signal corresponding to an atom optically pumped by laser.

Paper Details

Date Published: 2 July 1998
PDF: 9 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312815
Show Author Affiliations
Yosuke Sakai, Hokkaido Univ. (Japan)
M. A. Bratescu, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Geavid Musa, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Kenji Miyamoto, Hokkaido Univ. (Japan)
M. Miclea, National Institute for Laser, Plasma, and Radiation Physics (Romania)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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