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Proceedings Paper

Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single-quantum-well buried-heterostructure laser diodes
Author(s): Radu G. Ispasoiu; Niculae N. Puscas; Emil Smeu; C. E. Botez; Vladimir P. Iacovlev; Alexandru Z. Mereutza; Grigore I. Suruceanu
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Paper Abstract

In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation of the LD mirror facet layers, where the nonlinear optical interaction occurs.

Paper Details

Date Published: 2 July 1998
PDF: 7 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312791
Show Author Affiliations
Radu G. Ispasoiu, Politehnica Univ. of Bucharest (United States)
Niculae N. Puscas, Politehnica Univ. of Bucharest (Romania)
Emil Smeu, Politehnica Univ. of Bucharest (Romania)
C. E. Botez, Politehnica Univ. of Bucharest (Romania)
Vladimir P. Iacovlev, Technical Univ. of Moldova (Moldova)
Alexandru Z. Mereutza, Technical Univ. of Moldova (Moldova)
Grigore I. Suruceanu, Technical Univ. of Moldova (Switzerland)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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