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Proceedings Paper

Effects of UV laser radiation on the surface defects of NiO catalysts
Author(s): Eugenia Ivana; Veronica Lacatusu; Mariana Chelu; Mariana Craiu; Constantin G. Fenic; Aurel Stratan; Leona C. Nistor; Cornel Ghica; P. Marginean
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Paper Abstract

NiO is a metal-deficient p-type semiconductor with surface defects which are correlated with the non-stoichiometry. The dissociative H2 adsorption on the NiO surface takes place on oxygen-excess sites (over equilibrium). The H2 TPD spectra vary significantly with calcination temperature (stoichiometry) and chemical treatment UV laser radiation enhances H2 adsorption on the defective surfaces (non-stoichiometric) as compared with the stoichiometric ones, even chemically treated. The fourth harmonic of a Q-switched Nd:YAG laser is used for the NiO samples irradiation. The wavelength of the UV laser radiation is 266 nm, under the band-gap of the semiconductor.

Paper Details

Date Published: 2 July 1998
PDF: 6 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312760
Show Author Affiliations
Eugenia Ivana, Institute of Physical Chemistry (Romania)
Veronica Lacatusu, Institute of Physical Chemistry (Romania)
Mariana Chelu, Institute of Physical Chemistry (Romania)
Mariana Craiu, Institute of Physical Chemistry (Romania)
Constantin G. Fenic, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Aurel Stratan, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Leona C. Nistor, National Institute of Materials Physics (Romania)
Cornel Ghica, National Institute of Materials Physics (Romania)
P. Marginean, Institute of Isotopic and Molecular Technology (Romania)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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