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Proceedings Paper

Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds
Author(s): Aurelian Crunteanu; Rodica Alexandrescu; Raluca Cireasa; S. Cojocaru; Ion G. Morjan; A. Andrei; Ashock Kumar
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Paper Abstract

Since the theoretical studies of Liu and Cohen who predicted the existence of a superhard phase of carbon nitride, a great deal of effort was underdone in order to synthesize this hypothetical material with a nitrogen content as high as the 57% present in a (beta) -C3N4 structure. This study presents an attempt to produce CNx thin films using the laser-induced CVD technique. CW CO2 laser was used for irradiating various carbon-nitrogen containing mixtures such as C2H4/N2O/NH3. The CNx films were grown alternatively on bare alumina ((alpha) - Al2O3) substrates and on pre-deposited Ti films. A comparative analysis of nitrogen incorporation in the films obtained in different experimental conditions was performed by means of the X-ray photoelectron spectroscopy. The same method was used to identify the chemical states of the CN system.

Paper Details

Date Published: 2 July 1998
PDF: 6 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312751
Show Author Affiliations
Aurelian Crunteanu, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Rodica Alexandrescu, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Raluca Cireasa, National Institute for Laser, Plasma, and Radiation Physics (Romania)
S. Cojocaru, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Ion G. Morjan, National Institute for Laser, Plasma, and Radiation Physics (Romania)
A. Andrei, Institute of Nuclear Research (Romania)
Ashock Kumar, Univ. of South Alabama (United States)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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