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Proceedings Paper

Amorphous Se/CdSe and SiOx/CdSe multilayers
Author(s): Mihai A. Popescu; F. Sava; A. Lorinczi; Elena Vateva; D. Nesheva; G. Tchaushev; Ion N. Mihailescu; P.-J. Koch; S. Obst; H. Bradaczek
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Paper Abstract

Amorphous multilayers based on Se and CdSe alternated sublayers were successfully prepared by thermal vacuum evaporation and laser ablation with the periodicity of 22 nm. The multilayer structure is stable up to approximately 70 degree(s)C. In the samples prepared by laser ablation a large contraction of the multilayer stacking occurs by annealing. Amorphous SiOx/CdSe multilayers with the periodicity of approximately 15 nm were successfully prepared by thermal vacuum evaporation. The structure is stable up to 400 degree(s)C annealing temperature. Pulse excimer laser irradiation of the SiOx based multilayer produces an expansion of the interlayer distance with approximately 0.33%.

Paper Details

Date Published: 2 July 1998
PDF: 5 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312698
Show Author Affiliations
Mihai A. Popescu, National Institute for Materials Physics (Romania)
F. Sava, National Institute for Materials Physics (Romania)
A. Lorinczi, National Institute for Materials Physics (Romania)
Elena Vateva, Institute of Solid State Physics (Bulgaria)
D. Nesheva, Institute of Solid State Physics (Bulgaria)
G. Tchaushev, Institute of Solid State Physics (Bulgaria)
Ion N. Mihailescu, Institute of Atomic Physics (Romania)
P.-J. Koch, Freie Univ. Berlin (Germany)
S. Obst, Freie Univ. Berlin (Germany)
H. Bradaczek, Freie Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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