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Proceedings Paper

Electrical and optical characterization of PbTiO3/Si heterostructures for applications in optoelectronics
Author(s): V. Dragoi; Lucian Pintilie; Ioana Pintilie; D. Petre; I. Boerasu; M. Alexe
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Paper Abstract

The ferroelectric/semiconductor heterostructures were fabricated by sol-gel deposition of lead titanate (PT) thin films on a single-crystalline p-type Si wafers. The PT films were crystallized by a conventional thermal annealing for 30 min at temperatures ranging from 575 degree(s)C to 675 degree(s)C. Current-voltage and capacitance-voltage characteristics show a hysteresis which can be due to the spontaneous polarization of PbTiO3. The current-voltage characteristics exhibit a diode behavior while the capacitance-voltage exhibits a large memory window, up to 3.5 V, for the films annealed at 600 - 650 degree(s)C. At the illumination with modulated light, a.c. photovoltage was detected on a broad range of wavelengths (0.35 divided by 4 micrometers ) for all samples. The spectral distribution of the photoelectric signal in the UV-Vis- IR domain shows two local maxima. A model is proposed to explain the observed experimental results.

Paper Details

Date Published: 2 July 1998
PDF: 6 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312674
Show Author Affiliations
V. Dragoi, National Institute for Materials Physics (Germany)
Lucian Pintilie, National Institute for Materials Physics (Romania)
Ioana Pintilie, National Institute for Materials Physics (Romania)
D. Petre, National Institute for Materials Physics (Romania)
I. Boerasu, National Institute for Materials Physics (Romania)
M. Alexe, Max Planck Institute of Microstructure Physics (Germany)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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