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Proceedings Paper

Amorphous silicon photodetectors for optical integrated circuits
Author(s): M. Balucani; V. Bondarenko; G. Lamedica; A. Ricciardelli; A. Ferrari
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Paper Abstract

The first successful attempt to integrate on-chip optical waveguides based on oxidized porous silicon and amorphous silicon photodetectors have been demonstrated. Buried channel waveguides were performed by thermal oxidation of porous silicon. Amorphous silicon photodetectors were fabricated on the waveguides. Different device structures as well as their performance attributes are exhibited. The devices were demonstrated to have photocurrent characteristics promising for optoelectronic applications.

Paper Details

Date Published: 2 July 1998
PDF: 6 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312663
Show Author Affiliations
M. Balucani, INFM and Univ. degli Studi di Roma La Sapienza (Italy)
V. Bondarenko, INFM and Belarusian State Univ. of Informatics and Radioelectronics (Italy)
G. Lamedica, INFM and Univ. degli Studi di Roma La Sapienza di Roma (Italy)
A. Ricciardelli, INFM and Univ. degli Studi di Roma La Sapienza di Roma (Italy)
A. Ferrari, INFM and Univ. degli Studi di Roma La Sapienza di Roma (Italy)


Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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