Share Email Print
cover

Proceedings Paper

Structural basis for high thermal stability of a resist
Author(s): Sanjay Malik; Andrew J. Blakeney; Lawrence Ferreira; Medhat A. Toukhy; John E. Ferri
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A new class of novolaks capable of self associating has been synthesized. The associating structures are resulted via extended network of hydrogen bonding. Softening temperatures of the associating novolaks are found to be 15 - 25 degree(s)C higher than their non-associating analogs. The photoresist formulated with such associating novolaks have heat deformation temperature in the range of 130 - 140 degree(s)C. Features with sub 0.35 micrometers could be resolved using i-Line exposure. Site specific hydrogen bonding in such associating novolaks is studied by NMR and molecular simulations.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312478
Show Author Affiliations
Sanjay Malik, Olin Microelectronic Materials, Inc. (United States)
Andrew J. Blakeney, Olin Microelectronic Materials, Inc. (United States)
Lawrence Ferreira, Olin Microelectronic Materials, Inc. (United States)
Medhat A. Toukhy, Olin Microelectronic Materials, Inc. (United States)
John E. Ferri, Olin Microelectronic Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

© SPIE. Terms of Use
Back to Top