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Proceedings Paper

Etch integration issues in the development of deep submicron contacts utilizing DUV resist and organic BARC
Author(s): Viswanathan Ramanathan; Shixiong Chen; Kafai Lai; Maureen R. Brongo; Nandasiri Samarakone
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Paper Abstract

Deep UV lithography is widely used to print contacts and vias for the 0.25 micrometers process technology and beyond. Although significant improvements in the depth of focus and exposure latitude of the resist systems have been made using optimized resist formulations, their integrity against plasma etch conditions has to be addressed for the successful implementation in deep submicron process flows. In this paper, the first part of the discussion focuses on quantifying the etch rate differences and the impact of resist profile on the etched profile of different commercial DUV resists, using a Magnetically Enhanced Reactive Ion Etch tool with CF4:CHF3 and C4F8:CHF3 fluorocarbon etch chemistries. In the second part, sources of critical dimension variations such as iso vs dense contacts, wafer temperature effects during contact etch as well as etch issues related to the integration of BARC at the contact level are discussed.

Paper Details

Date Published: 29 June 1998
PDF: 7 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312473
Show Author Affiliations
Viswanathan Ramanathan, Rockwell Semiconductor Systems (United States)
Shixiong Chen, Rockwell Semiconductor Systems (United States)
Kafai Lai, Rockwell Semiconductor Systems (United States)
Maureen R. Brongo, Rockwell Semiconductor Systems (United States)
Nandasiri Samarakone, Rockwell Semiconductor Systems (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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