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Proceedings Paper

Design of an etch-resistant cyclic olefin photoresist
Author(s): Robert D. Allen; Juliann Opitz; Thomas I. Wallow; Richard A. Di Pietro; Donald C. Hofer; Saikumar Jayaraman; Karen A. Hullihan; Larry F. Rhodes; Brian L. Goodall; Robert A. Shick
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Paper Abstract

In the quest for a high performance 193 nm photoresist with robust plasma etching resistance equivalent to or better than the DUV resists of today, we have focused on the use of cyclic olefin polymers. In this paper, we will discuss monomer synthesis, polymerization approaches, polymer properties and early lithographic results of 193 nm photoresists formulated from cyclic olefin polymeric materials made from a metal-catalyzed addition polymerization process. The goal of this work is to produce a 193 nm photoresist with excellent imaging performance and etch resistance exceeding DUV resists, and in fact approaching novolak-based photoresists.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312472
Show Author Affiliations
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
Thomas I. Wallow, IBM Almaden Research Ctr. (United States)
Richard A. Di Pietro, IBM Almaden Research Ctr. (United States)
Donald C. Hofer, IBM Almaden Research Ctr. (United States)
Saikumar Jayaraman, BF Goodrich (United States)
Karen A. Hullihan, BF Goodrich (United States)
Larry F. Rhodes, BF Goodrich (United States)
Brian L. Goodall, BF Goodrich (United States)
Robert A. Shick, BF Goodrich (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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