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Proceedings Paper

Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography
Author(s): Shigeyuki Iwasa; Kaichiro Nakano; Katsumi Maeda; Etsuo Hasegawa
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Paper Abstract

A new polar alicyclic polymer has been developed as an ArF negative resist polymer. Poly(carboxytetracyclo[4.4.0.12,517,10] dodecyl acrylate-hydroxytricyclo[5.2.1.02,6]decyl acrylate (polyCTCDDAm-TCDAOHn)) has carboxyl and hydroxyl groups. It was founded that reactivity of the hydroxyl group was much higher than that of the carboxyl group in the acid- catalyzed crosslinking reaction. Poly(CTCDDA32-TCDAOH68) exhibits good solubility (0.5 micrometers /sec) in the standard developer (2.38% TMAH aq.), high transparency (70%/0.5 micrometers ) at 193-nm and high thermal stability (decomposition point: 230 degree(s)C). A chemically amplified negative resist composed of this polymer and 1,3,4,6- tetrakis(methoxymethyl)glicoluril (TMGU) provided a resolution of 0.18-micrometers L/S pattern with an ArF exposure system (NA equals 0.55) at a 9.2 mJ/cm2 dose.

Paper Details

Date Published: 29 June 1998
PDF: 8 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312460
Show Author Affiliations
Shigeyuki Iwasa, NEC Corp. (Japan)
Kaichiro Nakano, NEC Corp. (Japan)
Katsumi Maeda, NEC Corp. (Japan)
Etsuo Hasegawa, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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