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Proceedings Paper

Analysis of resist pattern collapse and optimization of DUV process for patterning sub-0.20-um gate line
Author(s): Jeong Yun Yu; Goo-Min Jeong; Hoon Huh; Jaejeong Kim; Sang-Pyo Kim; Jae-Keun Jeong; Hong-Seok Kim
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Paper Abstract

We analyzed the local pattern collapse by KLA-2132 in patterning gate line of 0.18 micrometers on the Poly-Si/WSix/Si3N4, where the thickness variation of Si3N4 (Nitride) film affected on the substrate reflectivity. By thickness split experiments of organic bottom anti- reflective layers (ARLs), we showed the effect of thickness variation of Nitride on the resist pattern collapse. We investigated the contribution of various factors to the pattern collapse. First of all, we focused on the CD variation due to substrate reflectivity variation to remove patterns of tolerable aspect ratio. In order to obtain better CD uniformity by tight reflectivity control considering the thickness variation of Nitride film, we optimized anti-reflective layer process using inorganic ARLs. As an inorganic ARL, we used PECVD SiOxNy:H(SiON) of which optical constants were changed by deposition conditions. We compared typical positive-tone DUV resists, of acetal based with environmentally stable chemically amplified photoresist type, to clarify the effect of resist and organic bottom ARL materials.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312455
Show Author Affiliations
Jeong Yun Yu, LG Semicon Co., Ltd. (South Korea)
Goo-Min Jeong, LG Semicon Co., Ltd. (South Korea)
Hoon Huh, LG Semicon Co., Ltd. (South Korea)
Jaejeong Kim, LG Semicon Co., Ltd. (South Korea)
Sang-Pyo Kim, LG Semicon Co., Ltd. (South Korea)
Jae-Keun Jeong, LG Semicon Co., Ltd. (South Korea)
Hong-Seok Kim, LG Semicon Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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