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Proceedings Paper

Discrimination enchancement in polysilsesquioxane-based positive resists for ArF lithography
Author(s): Jun Hatakeyama; M. Nakashima; I. Kaneko; Shigehiro Nagura; Toshinobu Ishihara
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Paper Abstract

In order to establish surface imaging process using O2- RIE on ArF lithography, silicon containing bi-layer resists have been investigated. We synthesized cyclohexyl pendant silsesquioxane polymer to obtain high transparency at ArF wavelength. This polymer has ladder siloxane structure with high Si density (13 wt%), over 80%0.35 um transmittance at 193 nm, and has carboxylic acid partially protected by acid labile group for TMAH aq. development. Addition of base enhanced the slope of deprotecting reaction and suppressed acid diffusion. The function of specific amines as acid quencher was considered to cause `Proton-Jumping'. Substituting of carboxylic acid by alcohol type polar linkage increased alkali tolerance, adhesion force and polymer Tg. Standard 2.38wt% TMAH developer was applied and expanded the dissolution rate gap. For further improvement of the resolution, we increased alkali tolerance by introduction of tricyclodecanyl pendant and optimized alkali concentration of developer. As a result, suitable dissolution curve for surface imaging resists was realized and rectangular patterns were observed on bottom ARC.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312454
Show Author Affiliations
Jun Hatakeyama, Shin-Etsu Chemical Co., Ltd. (Japan)
M. Nakashima, Shin-Etsu Chemical Co., Ltd. (Japan)
I. Kaneko, Shin-Etsu Chemical Co., Ltd. (Japan)
Shigehiro Nagura, Shin-Etsu Chemical Co., Ltd. (United States)
Toshinobu Ishihara, Shin-Etsu Chemical Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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