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Proceedings Paper

Material design and lithographic performance of novel hydroxystyrene copolymer-based DUV negative resists
Author(s): Takanori Kudo; Kayo Aramaki; Seiya Masuda; Georg Pawlowski
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Paper Abstract

The development of a negative tone chemically amplified DUV resist consisting of a hydroxystyrene based copolymer, a melamine crosslinker, a photoacid generator (PAG) and certain amine additives is described. A response surface method was employed to investigate the general trends of formulation and process changes on the lithographic performance. Microbridging was eliminated by either increasing the PAG concentration or the application of lower prebake temperatures. The pattern profiles were optimized by the selection of a specific amine/ammonium hydroxide combination; the effects of individual amine components are discussed and a correlation with their structures is given. The application of monodisperse polymer materials generally improved the pattern edge accuracy. The optimized resist material has a resolution potential below 0.15 micrometers (NA equals 0.55) combined with a large depth of focus (> 1.0 micrometers 0.15 micrometers iso lines), acceptable iso-dense bias, and small sensitivity towards changes in the post exposure bake conditions.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312453
Show Author Affiliations
Takanori Kudo, Clariant Japan K.K. (United States)
Kayo Aramaki, Clariant Japan K.K. (Japan)
Seiya Masuda, Clariant Japan K.K. (Japan)
Georg Pawlowski, Clariant Japan K.K. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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