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Proceedings Paper

Novel single-layer photoresist containing cycloolefins for 193 nm
Author(s): Joo Hyeon Park; Dong-Chul Seo; Ki-Dae Kim; Sun-Yi Park; Seong-Ju Kim; Hosull Lee; Jae Chang Jung; Cheol-Kyu Bok; Ki-Ho Baik
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Paper Abstract

New matrix resins containing maleic anhydride and cycloolefin units for ArF excimer laser resist have been developed. Several series of these matrix resins having good dry-etching durability were prepared by free radical polymerization using AlBN as free radical initiator. All of the resists using the matrix resins revealed good coating uniformity and adhesion to silicon wafer, and were readily soluble in a variety of resist solvents such as MMP, EEP, PGMEA and EL. In preliminary 193 nm testing a resist formulated with the matrix resins sulfonium triflate as photoacid generator afforded positive images with 0.14 micrometers L/S resolution. In this paper, we will discuss the polymerization results and lithographic properties for 193 nm exposure tool.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312449
Show Author Affiliations
Joo Hyeon Park, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Dong-Chul Seo, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Ki-Dae Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Sun-Yi Park, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Seong-Ju Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Hosull Lee, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Jae Chang Jung, Hyundai Electronics Industries Co., Ltd. (South Korea)
Cheol-Kyu Bok, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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