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Proceedings Paper

Application of a bilayer silylated resist process in volume production
Author(s): Robert Franzen; Andreas Grassmann; Markus Kirschinger; Thorsten Schedel; Harald Wiedenhofer; Markus Witte
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Paper Abstract

Many processes using dry developable silylated resist schemes were developed the last years, however, very few of them made their way into a high volume IC manufacturing line. Frequently the initial euphoria about their excellent lithographic performance was brought down to earth, when typical problems like high defect density, poor linewidth control or difficult stripability were encountered. In this paper we will report on the CARL process and its capability for mass production of DRAMs and logic ICs. We apply this process for the patterning of half-micron features over severe topography with conventional i-line steppers.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312442
Show Author Affiliations
Robert Franzen, Siemens AG (Germany)
Andreas Grassmann, Siemens AG (Germany)
Markus Kirschinger, Siemens AG (Germany)
Thorsten Schedel, Siemens AG (Germany)
Harald Wiedenhofer, Siemens AG (Germany)
Markus Witte, Siemens AG (Germany)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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