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Proceedings Paper

Improved positive surface modification resist process for 193-nm lithography
Author(s): Masayuki Endo; Takahiro Matsuo; Shigeyasu Mori; Taku Morisawa; Koichi Kuhara; Masaru Sasago; Masamitsu Shirai; Masahiro Tsunooka
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Paper Abstract

With increase in density of semiconductor devices, 193 nm lithography is promising to attain smaller feature size patterns. Surface imaging process is useful for this lithography in terms of large depth of focus and prevention from substrate reflection. As the surface imaging process, so far we developed positive surface modification resist process using CVD for various device patterns' fabrication. To solve the issues of selective polysiloxane layer formation and sensitivity, we have improved this positive surface modification resist process using a new polymer, poly(cyclohexyl p-styrenesulfonate-co-methyl methacrylate), and a new photobase generator, O-phenylacetyl acetonaphthone oxime. 0.15 micrometers pattern was successfully fabricated using the new process with improved sensitivity of 80 mJ/cm2.

Paper Details

Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312439
Show Author Affiliations
Masayuki Endo, Association of Super-Advanced Electronics Technologies (Japan)
Takahiro Matsuo, Association of Super-Advanced Electronics Technologies (Japan)
Shigeyasu Mori, Association of Super-Advanced Electronics Technologies (Japan)
Taku Morisawa, Association of Super-Advanced Electronics Technologies (Japan)
Koichi Kuhara, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)
Masamitsu Shirai, Osaka Prefecture Univ. (Japan)
Masahiro Tsunooka, Osaka Prefecture Univ. (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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