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Proceedings Paper

Novel ArF photoresist system using acrylic polymer
Author(s): Bang-Chein Ho; Jui-Fa Chang; Ting-Chung Liu; Jian-Hong Chen
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Paper Abstract

A novel resist for 193 nm lithography must be developed to fulfill the demands of future microelectronics fabrication processes. Enhancing 193 nm DUV single layer resist (SRL) materials has received extensive interest in recent years, which exclusively derivatized acrylic polymers due to the problem of absorption at 193 nm. In this work, we investigate acrylic polymers as a 193 nm DUV SLR material. Our acrylic polymer comprises of tertbutyl ester acid labile group and other groups. The resist system using the polymer displays a positive tone image in the presence of photoacid generator such as onium salts. This work also investigates the effects of acid number, acrylic polymer composition, molecular weight of acrylic polymer on 193 nm DUV SLR.

Paper Details

Date Published: 29 June 1998
PDF: 6 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312435
Show Author Affiliations
Bang-Chein Ho, Industrial Technology Research Institute (Taiwan)
Jui-Fa Chang, Industrial Technology Research Institute (Taiwan)
Ting-Chung Liu, Industrial Technology Research Institute (Taiwan)
Jian-Hong Chen, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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