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Proceedings Paper

Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group
Author(s): Katsuji Douki; Toru Kajita; Shin-Ichiro Iwanaga
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Paper Abstract

A new type of polymerization system for phenolic resin is proposed for high performance positive-working i-line photoresists used for sub-quarter micron lithography. A new design of phenolic resin is also proposed. The effects of end group of phenolic resin are mainly discussed from the standpoint of the dissolution characteristics of the photoresist and their lithographic performances; the resolution of 0.20 micrometers (1L/1.5S) on BARC with an annular illumination aperture (NA equals 0.57, 2.3 (sigma) equals 0.70).

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312428
Show Author Affiliations
Katsuji Douki, Japan Synthetic Rubber Corp. (United States)
Toru Kajita, Japan Synthetic Rubber Corp. (Japan)
Shin-Ichiro Iwanaga, Japan Synthetic Rubber Corp. (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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