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Proceedings Paper

Application of plasma-polymerized methylsilane for 0.18-um photolithography
Author(s): Cedric Monget; Carol Y. Lee; Olivier P. Joubert; Gilles R. Amblard; Timothy W. Weidman; Dian Sugiarto; John W. Yang; F. Cormont; R. L. Inglebert
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Paper Abstract

Plasma polymerized methylsilane resist films (PPMS) have high sensitivity to short wavelength radiation. The photoinduced oxidation of PPMS films exposed in air forms siloxane network material (called PPMSO), allowing dry development by selective etching of the unexposed regions upon treatment with chlorine based plasmas. Negative-tone patterns of oxidized methylsilane thus formed can be consolidated in a standard resist stripper to form SiO2 like hard mask patterns. In this work, PPMS films are deposited using a commercial single wafer cluster tool dedicated to dielectric deposition. After exposure at 248 or 193 nm, PPMS development is performed in a commercial high density plasma source etcher. Oxide patterns obtained from PPMS films are used for organic resist patterning (bi-layer application) and gate stack patterning (single layer application).

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312426
Show Author Affiliations
Cedric Monget, France Telecom CNET/DTM (France)
Carol Y. Lee, Intel Corp. (United States)
Olivier P. Joubert, France Telecom CNET/DTM and CNRS-LPCM-IMN (France)
Gilles R. Amblard, CNET/SGS-Thomson (United States)
Timothy W. Weidman, Applied Materials (United States)
Dian Sugiarto, Applied Materials (United States)
John W. Yang, Intel Corp. (United States)
F. Cormont, France Telecom CNET/DTM (France)
R. L. Inglebert, Univ. d'Orleans (France)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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