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Proceedings Paper

Novel antireflective structure for metal layer patterning
Author(s): Sang-Soo Choi; Han Sun Cha; Jong-Soo Kim; Jong Mun Park; Dohoon Kim; Kag Hyeon Lee; Jin-Ho Ahn; Hai Bin Chung; Bo Woo Kim
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Paper Abstract

IN lithographic processing to define patterns on the high reflective substrate, ARLs (anti-reflective layers) not only enable better line width control but also realize designs that were previously impossible to print. So far, several anti-reflective films like TiN, SiOxNy:H, and organic films for the high reflective substrate have been studied. In this paper, we suggest the novel anti-reflective structure for metal layer patterning, which is Al(aluminum)/SiO2 stack structure. the reflectivity and the resist absorption rate are simulated for the I-line, and ArF lithography. The simulated thickness of ARL(Al) and ARL(SiO2) for zero reflectivity on the wavelength of 365 nm was 12.6 nm and 95.2 nm respectively, and on the 193 nm was 20.4 nm and 98.8 nm. The process latitude according to the thickness variation of the deposited ARL(Al) and ARL(SiO2) films, and the results of the lithography experiment were discussed.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312423
Show Author Affiliations
Sang-Soo Choi, Electronics and Telecommunications Research Institute (South Korea)
Han Sun Cha, Hanyang Univ. (South Korea)
Jong-Soo Kim, Electronics and Telecommunications Research Institute (South Korea)
Jong Mun Park, Electronics and Telecommunications Research Institute (South Korea)
Dohoon Kim, Electronics and Telecommunications Research Institute (South Korea)
Kag Hyeon Lee, Electronics and Telecommunications Research Institute (South Korea)
Jin-Ho Ahn, Hanyang Univ. (South Korea)
Hai Bin Chung, Electronics and Telecommunications Research Institute (South Korea)
Bo Woo Kim, Electronics and Telecommunications Research Institute (South Korea)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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