Share Email Print
cover

Proceedings Paper

Positive bilayer resists for 248- and 193-nm lithography
Author(s): Ratnam Sooriyakumaran; Gregory M. Wallraff; Carl E. Larson; Debra Fenzel-Alexander; Richard A. Di Pietro; Juliann Opitz; Donald C. Hofer; Douglas C. LaTulip; John P. Simons; Karen E. Petrillo; Katherina Babich; Marie Angelopoulos; Qinghuang Lin; Ahmad D. Katnani
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have designed and developed new silicon containing methacrylate monomers that can be used in bilayer resist systems. New monomers were developed because the commercially available silicon monomers were found to be unsuitable for our applications. During the course of the investigation we determined that these monomers were acid labile. We have developed a high resolution DUV bilayer resist system based on these monomers. Although most of our work was concentrated on 248 nm lithography, we have demonstrated that this chemistry can be extended to 193 nm applications.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312411
Show Author Affiliations
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
Debra Fenzel-Alexander, IBM Almaden Research Ctr. (United States)
Richard A. Di Pietro, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
Donald C. Hofer, IBM Almaden Research Ctr. (United States)
Douglas C. LaTulip, IBM Thomas J. Watson Research Ctr. (United States)
John P. Simons, IBM Thomas J. Watson Research Ctr. (United States)
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
Katherina Babich, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Qinghuang Lin, IBM Microelectronics Div. (United States)
Ahmad D. Katnani, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

© SPIE. Terms of Use
Back to Top