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Proceedings Paper

Effect of the dissolution contrast on process margins in 193-nm lithography
Author(s): Makoto Takahashi; Shinji Kishimura; Takuya Naito; Takeshi Ohfuji; Masaru Sasago
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Paper Abstract

We examine the process margins of chemically amplified ArF resists designed for the single layer process. We measured the dissolution characteristics and investigated how the dissolution contrast affected the lithographic performance. We confirmed that high dissolution contrast can improve both the resolution and process margin. A 0.13 micrometers line and space pattern can be obtained. However, the depth of focus is not good enough for device fabrication. To achieve an acceptable process margin, we applied resolution enhancement techniques to the high-contrast resist. Applying off-axis illumination and an attenuated phase-shifting mask can greatly improve the process margin. 1.2 micrometers and 0.8 micrometers defocus margins were obtained at 0.15 and 0.13 micrometers line and space patterns, respectively.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312409
Show Author Affiliations
Makoto Takahashi, Association of Super-Advanced Electronics Technologies (United States)
Shinji Kishimura, Association of Super-Advanced Electronics Technologies (Japan)
Takuya Naito, Association of Super-Advanced Electronics Technologies (Japan)
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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