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Proceedings Paper

Negative-tone TSI process for 193-nm lithography
Author(s): Koichi Kuhara; Shigeyasu Mori; Yuko Kaimoto; Taku Morisawa; Takeshi Ohfuji; Masaru Sasago
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Paper Abstract

A negative-tone silylation process for 193-nm lithography has been investigated using chemically amplified resist that is based on poly(methacrylate) and poly(hydroxystyrene). Using polymethacrylate whose carboxyl groups were protected, we obtained negative-tone characteristics and a high sensitivity of 15 mJ/cm2. However, polymethacrylate didn't show a good pattern profile because of its poor thermal stability and low etching durability, thus further investigation is needed. In the case of polyhydroxystyrene, whose hydroxyl group is protected, there was not the problem observed in the polymethacrylate, and investigated the optimization of the resist. As a result of the optimization of photo-acid generator (PAG), we could obtain a good pattern profile of 0.11 micrometers L/S with the sensitivity of 400 mJ/cm2. It is thought that high sensitivity is dependent on the PAG that is selected. In our experiments, no swelling was observed after silylation unlike the case of positive-tone process. This phenomenon suggests that the swelling of the silylation layer compensates the loss of film thickness during deprotection reaction. Therefore, the negative-tone TSI process is considered to have the advantage of a resolution higher than that of a positive- tone process.

Paper Details

Date Published: 29 June 1998
PDF: 7 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312407
Show Author Affiliations
Koichi Kuhara, Association of Super-Advanced Electronics Technologies (Japan)
Shigeyasu Mori, Association of Super-Advanced Electronics Technologies (Japan)
Yuko Kaimoto, Association of Super-Advanced Electronics Technologies (Japan)
Taku Morisawa, Association of Super-Advanced Electronics Technologies (Japan)
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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