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Proceedings Paper

E-beam and deep-UV exposure of PMMA-based resists: identical or different chemical behavior?
Author(s): A. Uhl; Juergen Bendig; J. Leistner; Ulrich A. Jagdhold; Joachim J. Bauer
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Paper Abstract

The chemical reactions and the dissolution properties of homopolymeric PMMA and a P(MMA-co-MAA) copolymer were investigated during DUV (KrF, 248 nm) and e-beam exposure. The chain scission reaction was analyzed using GPC. The polymer degradation reaction is very similar at both exposure procedures. In both cases a bimodal and, later, a multimodal character of the molecular weight distribution is observed.

Paper Details

Date Published: 29 June 1998
PDF: 6 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312404
Show Author Affiliations
A. Uhl, Humboldt Univ. Berlin (FRG) and Institute for Semiconductor Physics (Germany)
Juergen Bendig, Humboldt Univ. Berlin (Germany)
J. Leistner, Humboldt Univ. Berlin (Germany)
Ulrich A. Jagdhold, Institute for Semiconductor Physics (Germany)
Joachim J. Bauer, Institute for Semiconductor Physics (Germany)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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