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Proceedings Paper

Resist residue generated on TiN topographic substrates in positive chemically amplified resists
Author(s): Hajime Wada; Akihiro Usujima; Yuichiro Yanagishita; Kenji Nakagawa
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Paper Abstract

When positive chemically amplified resists are used on basic stepped substrates to produce patterns, a resist residue often forms at the bottom of the step. This paper discusses the results of investigating the cause of the chemically amplified resist residue formation as it is encountered during patterning on stepped substrates.

Paper Details

Date Published: 29 June 1998
PDF: 7 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312390
Show Author Affiliations
Hajime Wada, Fujitsu Ltd. (Japan)
Akihiro Usujima, Fujitsu Ltd. (Japan)
Yuichiro Yanagishita, Fujitsu Ltd. (Japan)
Kenji Nakagawa, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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