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Proceedings Paper

Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization
Author(s): Jaclyn J. Yu; Catherine C. Meister; Gerald Vizvary; Cheng-Bai Xu; Patricia Fallon
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Paper Abstract

High contrast i-line resist have been traditionally achieved by using a blend of high molecular weight fractionated polymers with small dissolution rate enhancing additives. The fractionated polymer generally has low polydispersity and is manufactured through a costly, time consuming, and environmentally unfriendly fractionation process. A new Shipley resist, Ultra-i 120, has demonstrated sub-0.3 micrometers resolution with desired process capability without the use of fractionated polymers or dissolution rate enhancers. We achieved the high resolution by using the strategy of formulating a narrowly polydispersed, highly inhibiting, non-fractionated polymer with a blend of large, highly inhibiting PACs (photo-active compounds) with oligomeric ballast groups and smaller co-PACs. The high inhibition effects from the large PAC and the narrow poly-dispersivity of the polymer gives the resist very high contrast. The smaller co-PAC helps to enhance the photospeed of the resist and minimize the standing waves originating from the large PAC. The formulation strategy and the lithographic performance of Ultra-i 120 will be described using standard 90 degree(s)C soft bake and 110 degree(s)C PEB process and 2.38% TMAH (non-surfactant) developing process. The factors contributing to the high resist contrast will be identified and discussed.

Paper Details

Date Published: 29 June 1998
PDF: 16 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312389
Show Author Affiliations
Jaclyn J. Yu, Shipley Co. Inc. (United States)
Catherine C. Meister, Shipley Co. Inc. (United States)
Gerald Vizvary, Shipley Co. Inc. (United States)
Cheng-Bai Xu, Shipley Co. Inc. (United States)
Patricia Fallon, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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