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Proceedings Paper

Optimizing image transfer into AZ BARLi bottom coat for submicron i-line lithography
Author(s): Alberto Caligiore; Marco Valtolina; Alberto Cipolli; Arialdo Monguzzi; Fred Mohr; Mark A. Spak; Ralph R. Dammel
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Paper Abstract

The use of bottom antireflective coatings is one of the techniques that enable the fab engineer to extend the life of conventional i-line lithography into the deep submicron range. Spin-on antireflective coatings are highly effective in reducing the swing curve as well as standing wave and notching phenomena, and can be made to show extensive planarization. However, organic spin-on BARCs show lower etch selectivity than inorganic layers, so that they require specific attention in the dry etch image transfer step due to the potential for resist film loss. In this paper, we show that the interplay between the characteristics of wet developed features and of the dry etch image transfer step can be utilized to expand the process window for both isolated and dense lines in a 0.34 micrometers i-line production process.

Paper Details

Date Published: 29 June 1998
PDF: 5 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312388
Show Author Affiliations
Alberto Caligiore, SGS-Thomson Microelectronics (Italy)
Marco Valtolina, SGS-Thomson Microelectronics (Italy)
Alberto Cipolli, SGS-Thomson Microelectronics (Italy)
Arialdo Monguzzi, SGS-Thomson Microelectronics (Italy)
Fred Mohr, Clariant Corp. (United States)
Mark A. Spak, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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