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Proceedings Paper

Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists
Author(s): Pushkara Rao Varanasi; Kathleen M. Cornett; Ahmad D. Katnani
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Paper Abstract

This paper presents the synthesis, electronic absorption characteristics, thermal stability, acid sensitivity and lithographic potential of (alpha) -methylbenzylether protected poly(hydroxystyrene) derivatives. The results demonstrate the potential of (alpha) -methylbenzylether as an acid labile protecting group in the design of high performance DUV positive tone resist materials.

Paper Details

Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312381
Show Author Affiliations
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
Kathleen M. Cornett, IBM Microelectronics Div. (United States)
Ahmad D. Katnani, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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