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Proceedings Paper

New model for the effect of developer temperature on photoresist dissolution
Author(s): Chris A. Mack; Mark John Maslow; Atsushi Sekiguchi; Ronald A. Carpio
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Paper Abstract

The effects of developer temperature on dissolution behavior for eight g-line and i-line resists, ranging from first- generation to state-of-the-art formulations, are characterized using development rate measurements. Using the RDA-790 development rate measurement tool, dissolution rates as a function of dose and depth into the resist were measured. Each data set was analyzed and the basic performance of rate versus photoactive compound concentrations was fit to appropriate models. The variation of these results with temperature of the developer solution has led to temperature-dependent characterization of the dissolution modeling parameters. Two such parameters, the maximum dissolution rate Rmax and the dissolution selectivity parameter n, are shown to exhibit an Arrhenius behavior with well defined activation energies.

Paper Details

Date Published: 29 June 1998
PDF: 14 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312374
Show Author Affiliations
Chris A. Mack, Finle Technologies, Inc. (United States)
Mark John Maslow, Finle Technologies, Inc. (United States)
Atsushi Sekiguchi, Litho Tech Japan (Japan)
Ronald A. Carpio, SEMATECH (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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