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Proceedings Paper

Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography
Author(s): Thomas Steinhaeusler; Allen H. Gabor; Daniela White; Andrew J. Blakeney; David R. Stark; Daniel A. Miller; Georgia K. Rich; Victoria L. Graffenberg; Kim R. Dean
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Paper Abstract

The 193 nm photoresist generation will need several technological approaches in order for it to be successfully integrated into manufacturing. These approaches include bilayer, single layer and top surface imaging resists. Bilayer resists offer the advantages of thin film imaging (resolution, depth of focus) and potential advantages in plasma etch resistance due to the possibility of incorporating aromatic components into the undercoat. We have developed a prototype bilayer resist system based on a silicon containing methacrylate imageable layer and a crosslinked styrenic copolymer undercoat which has shown 0.13 micrometers resolution. In this paper we will discuss the effects of O2-RIE and polysilicon etch on resist and substrate profile, selectivity and iso-dense resist.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312373
Show Author Affiliations
Thomas Steinhaeusler, Olin Microelectronic Materials, Inc. (United States)
Allen H. Gabor, Olin Microelectronic Materials, Inc. (United States)
Daniela White, Olin Microelectronic Materials, Inc. (United States)
Andrew J. Blakeney, Olin Microelectronic Materials, Inc. (United States)
David R. Stark, SEMATECH (United States)
Daniel A. Miller, SEMATECH (United States)
Georgia K. Rich, SEMATECH (United States)
Victoria L. Graffenberg, SEMATECH (United States)
Kim R. Dean, SEMATECH (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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