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Proceedings Paper

Chemically amplified resist technology for i-line applications
Author(s): Medhat A. Toukhy; Sanjay Malik; Andrew J. Blakeney; Karin R. Schlicht
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Paper Abstract

This paper presents a discussion on the development of i- line resist chemistry as anticipated by the future technology and the needs of the new exposure tools. Commercially available high numerical aperture (NA) and low NA wide field i-line steppers stand to gain in throughput as the resist photospeed is increased. However, the advantages of developing 50 mJ/cm2 or faster resist products capable of less than 0.3 micrometers resolution is not clear at the present time. Future development of i-line scanners and greater demands on throughput may give rise to the need for such products. Conventional novolak based/diazonaphthoquinone resist chemistry is not capable of providing such performance. Chemically amplified (CA) resist products employed in deep ultra violet (DUV) regime demonstrated the capability of this chemistry to deliver high resolution and photospeed performance. If such a performance is to be needed in i-line, then CA i-line resist chemistry would be the technology of choice. Significant resist cost reduction is possible if i-line transparent phenolic resins, such as novolaks, can be used replacing expensive poly-hydroxystyrene base polymers that are necessary to use in DUV resist products.

Paper Details

Date Published: 29 June 1998
PDF: 6 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312371
Show Author Affiliations
Medhat A. Toukhy, Olin Microelectronic Materials (United States)
Sanjay Malik, Olin Microelectronic Materials (United States)
Andrew J. Blakeney, Olin Microelectronic Materials (United States)
Karin R. Schlicht, Olin Microelectronic Materials (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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