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Proceedings Paper

Advanced ARCH resist
Author(s): N. R. Bantu; J. Marshall; T. Holt; D. Perry; D. Khan
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Paper Abstract

Conventional acetal based, chemically amplified DUV photoresists are known to yield unacceptable shrinkage after exposure due to volatile nature of the byproducts generated after acid catalysis at room temperature. This paper mainly demonstrates that all acetal based resists do not produce the same extent of shrinkage. Higher boiling vinyl ether acetal (HBVEA) polymers can potentially be used to completely minimize the shrinkage (< 0.6%) and this value is independent of the blocking levels of the polymer. Dissolution rate in the exposed areas are found to be relatively greater for HBVEA polymers when compared to low boiling vinyl ether acetal polymers under identical conditions. Observed less shrinkage and higher dissolution rate values are attributed to the non-volatile nature of the alcohol generated in the film after photo-acid induced deprotection reaction. HBVEA polymers are demonstrated to resolve 175 nm lines/spaces using 0.53 NA stepper.

Paper Details

Date Published: 29 June 1998
PDF: 15 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312368
Show Author Affiliations
N. R. Bantu, Olin Microelectronic Materials (United States)
J. Marshall, Olin Microelectronic Materials (United States)
T. Holt, Olin Microelectronic Materials (United States)
D. Perry, Olin Microelectronic Materials (United States)
D. Khan, Olin Microelectronic Materials (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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