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Proceedings Paper

Negative-type chemically amplified resists for ArF excimer laser lithography
Author(s): Takuya Naito; Makoto Takahashi; Takeshi Ohfuji; Masaru Sasago
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Paper Abstract

A new negative resist consisting of an anhydride, an acrylic acid, an epoxy crosslinker and a photoacid generator is introduced. In the exposed area, the epoxy groups of the crosslinker react with anhydride groups and/or carboxylic acids in the polymer under existence of photogenerated acid as a catalyst during post exposure baking. A 0.20 micrometers pattern was resolved by an ArF exposure at a dose of 28 mJ/cm2.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312364
Show Author Affiliations
Takuya Naito, Association of Super-Advanced Electronics Technologies (Japan)
Makoto Takahashi, Association of Super-Advanced Electronics Technologies (United States)
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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