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Proceedings Paper

High-silicon-concentration TSI process for 193-nm lithography
Author(s): Shigeyasu Mori; Taku Morisawa; Nobuyuki N. Matsuzawa; Yuko Kaimoto; Masayuki Endo; Takahiro Matsuo; Koichi Kuhara; Takeshi Ohfuji; Masaru Sasago
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Paper Abstract

A high-silicon-concentration top surface imaging (TSI) process for 193-nm lithography has been developed using vapor phase silylation, using dimethylaminopentamethyldisiloxane as a silylation agent and polydihydroxystyrene as a resist material. The etching rate of silylated resist can be explained by the relationship between the silicon content, the decomposition temperature, and the density. The pattern profile of the new TSI process can resolve 0.14 micrometers L/S. Although silylated layer flow occurs in a process below the glass transition temperature, the flow problem can be resolved by using a chemically amplified resist.

Paper Details

Date Published: 29 June 1998
PDF: 8 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312359
Show Author Affiliations
Shigeyasu Mori, Association of Super-Advanced Electronics Technologies (Japan)
Taku Morisawa, Association of Super-Advanced Electronics Technologies (Japan)
Nobuyuki N. Matsuzawa, Association of Super-Advanced Electronics Technologies (Japan)
Yuko Kaimoto, Association of Super-Advanced Electronics Technologies (Japan)
Masayuki Endo, Association of Super-Advanced Electronics Technologies (Japan)
Takahiro Matsuo, Association of Super-Advanced Electronics Technologies (Japan)
Koichi Kuhara, Association of Super-Advanced Electronics Technologies (Japan)
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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