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Proceedings Paper

Improving the performance of 193-nm photoresists based on alicyclic polymers
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Paper Abstract

This paper reports our work on a series of alicyclic polymer-based photoresist platforms designed for 193 nm lithography. The polymers described here were prepared from derivatives of norbornene and appropriate co-monomers by either free radical or ring opening metathesis polymerization methods. A variety of techniques were explored as a means of enhancing the lithographic, optical, dissolution, and mechanical properties of photoresists formulated from these alicyclic polymers. Recent studies designed to improve the lithographic performance of photoresists formulated with these materials are described.

Paper Details

Date Published: 29 June 1998
PDF: 13 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312356
Show Author Affiliations
Kyle Patterson, Univ. of Texas/Austin (United States)
Uzodinma Okoroanyanwu, Univ. of Texas/Austin (United States)
Tsutomu Shimokawa, Univ. of Texas/Austin (Japan)
Sungseo Cho, Univ. of Texas/Austin (United States)
Jeff D. Byers, SEMATECH (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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