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Proceedings Paper

Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates
Author(s): Lori Anne Joesten; Matthew L. Moynihan; Tracy K. Lindsay; Michael T. Reilly; Kathy Konjuh; David Mordo; Kenneth P. MacWilliams; Srini Sundararajan
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Paper Abstract

Chemically-amplified positive DUV photoresists are well known to exhibit small profile deviation at the resist substrate interface, commonly called footing, when processed on substrates like silicon oxynitride (SiON), titanium nitride, and boron phosphorous silicate glass. Severe footing can cause etch problems resulting in critical dimension nonuniformity and degraded lithographic performance. The objective of this paper is to examine possible solutions to footing on SiON substrates by focusing on three main areas: photoresist formulation, photoresist processing and substrate manipulation.

Paper Details

Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312354
Show Author Affiliations
Lori Anne Joesten, Shipley Co. Inc. (United States)
Matthew L. Moynihan, Shipley Co. Inc. (United States)
Tracy K. Lindsay, Shipley Co. Inc. (United States)
Michael T. Reilly, Shipley Co. Inc. (United States)
Kathy Konjuh, Novellus Systems, Inc. (United States)
David Mordo, Novellus Systems, Inc. (United States)
Kenneth P. MacWilliams, Novellus Systems, Inc. (United States)
Srini Sundararajan, Novellus Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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