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Proceedings Paper

Photoacid generators in chemically amplified resists
Author(s): Yasuhiro Suzuki; Donald W. Johnson
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Paper Abstract

It is well known that onium salt structure has an influence on resist resolution and post exposure delay stability as well as solubility in typical resist solvents. As a result of our study, it was found that resists have higher contrast when t-butylphenyl substituents replaced phenyl or alkyl substituents in the cation segment of onium-type photoacid generators in both iodonium and sulfonium systems. Dissolution inhibition appeared to play a primary role. In this paper we also report the results of our investigation into onium-type photoacid generators possessing reduced diffusion, lower volatility and suitable acidity to cleave common protecting groups such as t-butoxycarbonyl, acetal and t-butyl. Substituted benzene sulfonic acids were very useful for cleaving common protecting groups in polyhydroxystyrene based Deep-UV resist systems. The addition of alkyl groups to the ring had only slight effect on acid diffusion. Perfluoro sulfonic acids were required to cleave adequately, the acid stable leaving groups in methacrylate resist systems.

Paper Details

Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312350
Show Author Affiliations
Yasuhiro Suzuki, Toyo Gosei Co., Ltd. (United States)
Donald W. Johnson, MicroChem Corp. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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