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Proceedings Paper

Some aspects of thick-film resist performance and modeling
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Paper Abstract

Realistic simulation of DNQ-novolac thick film resist performance requires accurate modeling of a number of steps including light propagation inside the resist and the development process. This paper addresses several advanced topics for the characterization and modeling of thick film resists including exposure induced changes in the resist refractive index and depth dependent development rate functions. Simulations performed using traditional light propagation models such as the scaled-defocus algorithm are compared to the new finite difference beam-propagation algorithm which can account for exposure induced resist refractive index changes. The impact of depth dependent development rate phenomena will also be discussed. A series of simulated profiles are compared to experimental results for two thick film resist series, AZTM AEP4000 and AZTM AE9200.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312349
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institute for Silicon Technology (Germany)
Clifford L. Henderson, Univ. of Texas/Austin (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)
Ralph R. Dammel, Clariant Corp. (United States)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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