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Proceedings Paper

Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method
Author(s): Naomi Shida; Takeshi Okino; Koji Asakawa; Tohru Ushirogouchi; Makoto Nakase
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Paper Abstract

Recent advances in the single-layer resist for forming finer patterns have led us to a search for new resist materials for the ArF excimer laser. We describe a novel, environmentally friendly, single-layer resist based on a menthyl acrylate copolymer protected with a cleavable alicyclic group and the absorption band shift method.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312341
Show Author Affiliations
Naomi Shida, Toshiba Corp. (Japan)
Takeshi Okino, Toshiba Corp. (Japan)
Koji Asakawa, Toshiba Corp. (Japan)
Tohru Ushirogouchi, Toshiba Corp. (Japan)
Makoto Nakase, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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