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Proceedings Paper

Polymer design in surface modification resist process for ArF lithography
Author(s): Takahiro Matsuo; Masayuki Endo; Shigeyasu Mori; Koichi Kuhara; Masaru Sasago; Masamitsu Shirai; Masahiro Tsunooka
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Paper Abstract

The surface modification resist process, which gives negative-tone image owing to the polysiloxane formation on the expected resist surface using a chemical vapor deposition, was studied for ArF lithography. We have designed the resist polymer for improving the resolution, the pattern profile and the sensitivity. We developed the polymer having a photoacid generating unit and a polarity change unit for improving the resolution. Though there was a problem of the pattern degradation by heating in the dry development using a TCP etcher, 0.13 micrometers pattern was achieved with steep wall profile by introducing the thermally stable alicyclic unit to this polymer system. Moreover, we investigated the polymer having a photoacid generating unit and a hydrophilic unit for improving sensitivity. It was found that the introduction of an adequate amount of the hydrophilic unit was effective for improving the sensitivity.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312340
Show Author Affiliations
Takahiro Matsuo, Association for Super-Advanced Electronics Technologies (Japan)
Masayuki Endo, Association for Super-Advanced Electronics Technologies (Japan)
Shigeyasu Mori, Association for Super-Advanced Electronics Technologies (Japan)
Koichi Kuhara, Association for Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association for Super-Advanced Electronics Technologies (Japan)
Masamitsu Shirai, Osaka Prefecture Univ. (Japan)
Masahiro Tsunooka, Osaka Prefecture Univ. (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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