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Proceedings Paper

Stability of the gate-dielectric/a-Si:H interface with hydrogen plasma treatment
Author(s): I-Min Lu; Yeong-E Chen; Ting-Hui Huang; Hui-Chu Lin
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Paper Abstract

Hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with single-layer gate insulator have been stressed with DC bias to investigate the device performance. A low defect density interface between the gate insulator (SiNx) and the a-Si:H film is one of the most important factors to obtain high device performance. For the back-channel-etched (BCE) type TFTs, gate SiNx is deposited before a-Si:H film, and the hydrogen plasma was used to treat the SiNx insulator surfaces. From the results of stress experiments, exposing SiNx to hydrogen plasma leads to the charge trapping in SiNx insulator and the state creation in the a-Si:H film. Consequently, the hydrogen plasma treatment of SiNx surface affects not only the SiNx insulator but also the post-deposited a-Si:H film.

Paper Details

Date Published: 17 June 1998
PDF: 5 pages
Proc. SPIE 3421, Display Technologies II, (17 June 1998); doi: 10.1117/12.311060
Show Author Affiliations
I-Min Lu, Industrial Technology Research Institute (Taiwan)
Yeong-E Chen, Industrial Technology Research Institute (Taiwan)
Ting-Hui Huang, Industrial Technology Research Institute (Taiwan)
Hui-Chu Lin, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 3421:
Display Technologies II
Fang-Chen Luo; Shin-Tson Wu; Shunsuke Kobayashi, Editor(s)

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