Share Email Print

Proceedings Paper

Effect of effective intrinsic a-Si:H thickness for backchannel-etch-type a-Si TFTs
Author(s): Jun-Wei Tsai; Fang-Chen Luo; HuangChung Cheng
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The performance of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is influenced by the effective intrinsic a-Si:H thickness which is the remaining thickness of intrinsic a-Si:H after n+-Si etching for back- channel-etch type a-Si:H TFTs. As the thickness of the as- deposited a-Si:H increases, the on-current and linear mobility of the TFT decrease significantly, but the threshold voltage and saturation mobility only change slightly. It is caused by the series resistance and space- charge-limited current for the as-deposited a-Si:H film. On the other hand, when the thickness of the a-Si:H after n+-Si etching decreases from 200 nm to 150 nm, the Ion, (mu) s, (mu) lin, and Vth do not change greatly. However, if the effective thickness of a-Si:H reduces to 50 nm, the Ion, (mu) s, and (mu) lin decrease and Vth increase. It is the result of the Fermi level pinning at the back-channel surface and plasma-damage for thin a-Si after n+-Si etching.

Paper Details

Date Published: 17 June 1998
PDF: 4 pages
Proc. SPIE 3421, Display Technologies II, (17 June 1998); doi: 10.1117/12.311059
Show Author Affiliations
Jun-Wei Tsai, Unipac Optoelectronics Corp. (Taiwan)
Fang-Chen Luo, Unipac Optoelectronics Corp. (Taiwan)
HuangChung Cheng, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3421:
Display Technologies II
Fang-Chen Luo; Shin-Tson Wu; Shunsuke Kobayashi, Editor(s)

© SPIE. Terms of Use
Back to Top