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Proceedings Paper

MOCVD growth of AlGaN UV LEDs
Author(s): Jung Han; Mary Hagerott Crawford
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Paper Abstract

Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH3, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm represents the first report of LED operation from an indium-free GaN QW diode.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341907 (22 June 1998); doi: 10.1117/12.311042
Show Author Affiliations
Jung Han, Sandia National Labs. (United States)
Mary Hagerott Crawford, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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