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Proceedings Paper

MBE-grown high-efficiency 808-nm laser diodes
Author(s): Xinqiao Wang; Jun Wang; Geoffrey T. Burnham
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Paper Abstract

High power semiconductor lasers operating at 808 nm lasing wavelength with high internal quantum efficiency and low internal loss have been fabricated by solid source MBE. Experimental results have shown as high as 65.5 percent maximum wall-plug efficiency at room temperature for 1.5 mm cavity length devices. The wall-plug efficiency maintains up to 58 percent even when the devices operate at 6 watts of CW output power.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341919 (22 June 1998); doi: 10.1117/12.311031
Show Author Affiliations
Xinqiao Wang, Semiconductor Laser International Corp. (United States)
Jun Wang, Semiconductor Laser International Corp. (United States)
Geoffrey T. Burnham, Semiconductor Laser International Corp. (United States)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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