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Proceedings Paper

Ion beam synthesis of beta-FeSi2 as an IR photosensitive material
Author(s): Yoshihito Maeda; Tomoki Akita; Kenji Umezawa; Kiyoshi Miyake; Masakazu Sagawa
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Paper Abstract

The large sized and flat polycrystalline (beta) -FeSi2/n- Si heterojunction can be formed by a triple energy implantation method and the sample annealing at 800 degrees C. The polycrystalline (beta) -FeSi2 gains show good crystalline characteristics, a photoluminescence peak at 0.81 eV at 4.2 K and the optical direct band-gap of 0.84 eV. The (beta) -FeSi2/n-Si heterojunction shows good diode characteristics and high photovoltaic sensitivity for IR light. These results support that the ion beam synthesized (beta) -FeSi2/n-Si heterojunction is a promising IR sensitive materials.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341916 (22 June 1998); doi: 10.1117/12.311028
Show Author Affiliations
Yoshihito Maeda, Osaka Prefecture Univ. (Japan)
Tomoki Akita, Osaka Prefecture Univ. (Japan)
Kenji Umezawa, Osaka Prefecture Univ. (Japan)
Kiyoshi Miyake, Hitachi Ltd. (Japan)
Masakazu Sagawa, Hitachi Central Research Lab. (Japan)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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