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Proceedings Paper

Phonon-assisted photoluminescence in wurtzite GaN epilayer
Author(s): Wei Liu; Ming Fu Li; ShiJie Xu; Kazuo Uchida; Koh Matsumoto
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Paper Abstract

Photoluminescence of wurztite GaN epilayer was measured in the range of 4K to 300K. At low temperature, the neutral- donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The exciton linewidth due to exciton-phonon interaction was studied.Lo phonon-assisted photoluminescence associated with both the bound exciton and the free exciton were also observed. The temperature dependence of LO phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors. In particular, the study of 2LO phonon replica can provide information of the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341905 (22 June 1998); doi: 10.1117/12.311027
Show Author Affiliations
Wei Liu, National Univ. of Singapore (Singapore)
Ming Fu Li, National Univ. of Singapore (Singapore)
ShiJie Xu, Institute of Material Research Engineering (Hong Kong)
Kazuo Uchida, Univ. of Electro-Communications (Japan)
Koh Matsumoto, Nippon Sanso Co. (Japan)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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